| P/N |
Density |
PKG(mm) |
Voltage |
Temp.Range |
Configurations |
Status |
| FMND1G08S3D |
1Gb |
TSOP & VFBGA |
1.8V |
-40℃~85℃ |
X8 |
MP |
FEATURES
■ X8 I/O BUS
－ NAND Interface
－ ADDRESS / DATA Multiplexing
■ SUPPLY VOLTAGE
－ VCC = 1.65-1.95 Volt core supply voltage for Program, Erase and Read operations
■ PAGE READ / PROGRAM
－ X8: (2048+64 spare) byte
－ Synchronous Page Read Operation
－ Random access: 25us (Max)
－ Serial access: 45ns (1.8V) 25ns
－ Page program time: 300us (Typ)
■ PAGE COPY BACK
－ Fast data copy without external buffering
■ CACHE PROGRAM
－ Internal buffer to improve the program throughput
■ READ CACHE
■ LEGACY/ONFI 1.0 COMMAND SET
■ FAST BLOCK ERASE
－ Block size (X8): (128K + 4K) bytes
－ Block erase time: 2ms (Typ)
■ MEMORY CELL ARRAY
－ X8: (2K + 64) bytes x 64 pages x 1024 blocks
■ ELECTRONIC SIGNATURE
－ Manufacturer Code
－ Device Code
■ STATUS REGISTER
■ HARDWARE DATA PROTECTION
■ DATA RETENTION
－ 50K Program / Erase cycles
－ Data retention: 10 Years (4bit/512byte ECC)
－ Block zero is a valid block and will be valid for at least 1K program-erase cycles with ECC
